STW13NM60N 查看數據表（PDF） - STMicroelectronics

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STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STMicroelectronics 

STF13NM60N, STI13NM60N, STP13NM60N,

STU13NM60N, STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET

in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

Datasheet — production data

Features

Order codes

STF13NM60N

STI13NM60N

STP13NM60N

STU13NM60N

STW13NM60N

VDSS

(@Tjmax)

650 V

RDS(on)

max

< 0.36 Ω

ID

11 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

TAB

3

2

1

TO-220FP

123

I²PAK

TAB

TAB

3

2

1

TO-220

3

2

1

IPAK

3

2

1

TO-247

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Figure 1. Internal schematic diagram

$OR4!"

'

3

3#

Table 1. Device summary

Order codes

STF13NM60N

STI13NM60N

STP13NM60N

STU13NM60N

STW13NM60N

Marking

13NM60N

Packages

TO-220FP

I²PAK

TO-220

IPAK

TO-247

Packaging

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November 2012

This is information on a product in full production.

Doc ID 15420 Rev 5

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