AT45DB041-RI 查看數據表（PDF） - Atmel Corporation
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AT45DB041-RI Datasheet PDF : 18 Pages
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AT45DB041
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 1 (264 BYTES)
BUFFER 1
WRITE
MAIN MEMORY
PAGE PROGRAM
THROUGH BUFFER 2
MAIN MEMORY PAGE
PROGRAM THROUGH
BUFFER 1
I/O INTERFACE
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 2 (264 BYTES)
BUFFER 2
WRITE
SI
Main Memory Page Program through Buffers
CS
SI
CMD
r r r r r , PA9-7 PA6-0, BFA8
BFA7-0
n
· Completes writing into selected buffer
· Starts self-timed erase/program operation
n+1
Last Byte
Buffer Write
CS
SI
CMD
X
X···X, BFA8 BFA7-0
n
· Completes writing into selected buffer
n+1
Last Byte
Buffer to Main Memory Page Program
(Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
SI
CMD
r r r r r, PA9-7 PA6-0, X
X
Each transition represents
8 bits and 8 clock cycles
n = 1st byte read
n+1 = 2nd byte read
9
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