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BUZ102SE3045A 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BUZ102SE3045A
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
Infineon Technologies
BUZ102SE3045A Datasheet PDF : 8 Pages
1
2
3
4
5
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7
8
BUZ 102S
Power Dissipation
P
tot
=
f
(
T
C
)
BUZ102S
2.8
W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
˚
C
190
T
C
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25
˚
C
10
3
BUZ102S
A
t
p
= 19.0µs
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
BUZ102S
60
A
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
˚
C
190
T
C
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
BUZ102S
K/W
10
0
10
2
10
1
10
0
10
-1
10
0
100 µs
1 ms
10 ms
DC
10
1
V
10
2
V
DS
10
-1
10
-2
10
-3
10
-4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
Data Book
5
05.99
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