HA-5112 查看數據表（PDF） - Intersil

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产品描述 (功能)

生产厂家

HA-5112

Dual, Low Noise, High Performance Uncompensated Operational Amplifier

Intersil 

HA-5112/883

Die Characteristics

DIE DIMENSIONS:

98.4 x 67.3 x 19 mils ± 1 mils

2500 x 1710 x 483µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16kÅ ± 2kÅ

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

WORST CASE CURRENT DENSITY:

1.43 x 105A/cm2 at 10mA

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

TRANSISTOR COUNT: 93

PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5112/883

V-

+IN1

-IN1

OUT1

+IN2

-IN2

OUT2

V+

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

3-123

Spec Number 511032-883

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