High-Efficiency, Low-IQ, PMICs with Dynamic
Voltage Management for Mobile Applications
ELECTRICAL CHARACTERISTICS (continued)
(VIN = VIN5 = VIN67 = VIN8 = 3.6V, Figure 3, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER
LBO Deassert Delay
LBF and LBR Input Bias Current
RESET (MR, RSO)
RSO Threshold
RSO Deassert Delay
RSO Output-High Leakage
Current
SYMBOL
CONDITIONS
MIN
tVBHBFH Figure 6
0
TA = +25°C
-50
TA = +85°C
VRSOTH Voltage on V8, falling, hysteresis is 5% (typ) 2.1
tVBHRSTH Figure 6
20
VIN = 6V, TA = +25°C
RSO Output Low Level
Minimum VIN for RSO Assertion
2.6V ≤ VIN ≤ 6V, sinking 3mA
VIN = 1V, sinking 100µA
RSO is forced low when the device is in
UVLO
1
MR Input High Level
2.6V ≤ VIN ≤ 6V
1.4
MR Input Low Level
2.6V ≤ VIN ≤ 6V
MR Input Leakage Current
VIN = 6V, TA = +25°C
-0.2
MR Minimum Pulse Width
tMR
THERMAL-OVERLOAD PROTECTION
Thermal-Shutdown Temperature
Thermal-Shutdown Hysteresis
TJ rising
ENABLE INPUTS (EN1, EN2, EN34, EN5)
EN_ Input High Level
2.6V ≤ VIN ≤ 6V
1.4
EN_ Input Low Level
2.6V ≤ VIN ≤ 6V
EN_ Input Leakage Current
VIN = 6V, TA = +25°C
-0.2
I2C LOGIC (SDA, SCL, SRAD)
SCL, SDA Input High Voltage
1.4
SCL, SDA Input Low Voltage
SCL, SDA Input Hysteresis
SCL, SDA Input Current
SDA Output Low Voltage
SRAD Input High Level
SRAD Input Low Level
SRAD Input Leakage Current
TA = +25°C, IN = AGND, VIN = 6V
-10
2.6V ≤ VIN ≤ 6V, sinking 3mA
2.6V ≤ VIN ≤ 6V
1.4
2.6V ≤ VIN ≤ 6V
VIN = 6V, TA = +25oC
-0.2
TYP MAX UNITS
3
µs
0
+50
nA
0.5
2.2
2.3
V
24
28
ms
0.2
µA
0.2
V
0.4
V
V
0.4
V
+0.2
µA
1
µs
+160
°C
15
°C
V
0.4
V
+0.2
µA
V
0.4
V
0.1
V
+10
µA
0.2
V
V
0.4
V
+0.2
µA
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