MRFE6S9125NR1 查看數據表（PDF） - Freescale Semiconductor
零件编号
产品描述 (功能)
生产厂家
MRFE6S9125NR1 Datasheet PDF : 18 Pages
| |||
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
−20 Two−Tone Measurements
−10
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 880 MHz
−40
3rd Order
−60
5th Order
−80
7th Order
−100
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−30 IM3−U
IM3−L
IM5−U
−40
IM5−L
−50 IM7−U
IM7−L
−60
1
10
80
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
59
P6dB = 53.39 dBm (218.27 W)
58
57
P3dB = 52.83 dBm (191.87 W)
56
55
P1dB = 51.92 dBm
54 (155.6 W)
53
52
51
50
29 30 31 32
Actual
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
33 34 35 36 37 38 39
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
70
VDD = 28 Vdc, IDQ = 950 mA
60 f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
50 8 Through 13
40
30
ACPR
TC = −30_C
25_C
−30_C
−10
85_C −20
25_C
−30
85_C
25_C −40
−30_C
85_C −50
20
Gps
10
ηD
0
1
ALT1
10
−30_C −60
85_C
−70
25_C
−80
100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
7
Share Link: 