¡ Semiconductor
MSM80C31F/80C51F
External Data Memory Access AC Characteristics 2
(VCC = 2.5 to 4.0 V, VSS = 0 V, Ta = –40°C to +85°C; load capacitance for Port 0, ALE, and PSEN =
100 pF ; load capacitance for all other outputs = 80 pF)
Parameter
Symbol
XTAL1, XTAL2 Oscillation Cycle
ALE Single Width
Adderss Setup Time
(to ALE Falling Edge)
Adderss Hold Time
(from ALE Falling Edge)
RD Single Width
WR Single Width
RAM Data Read Time
(from RD Single Falling Edge)
RAM Data Read Hold Time
(from RD Single Rising Edge)
Data Bus Floating Time
(from RD Single Rising Edge)
RAM Data Read Time
(from ALE Single Falling Edge)
RAM Data Read Time
(from Address Output)
RD/WR Output Time from
ALE Falling Edge
RD/WR Output Time from
Address Output
RD Output Time from Data Output
Time from Data Output to
WR Rising Edge
Data Hold Time (WR Rising Edge)
Time from RD Output to
Address Float
Time from RD/WR Rising
Edge to ALE Rising Edge
tCLCL
tLHLL
tAVLL
tLLAX
tRLRH
tWLWH
tRLDV
tRHDX
tRHDZ
tLLDV
tAVDV
tLLWL
tAVWL
tQVWX
tQVWH
tWHQX
tRLAZ
tWHLH
12 MHz Clock
Min.
—
126
43
Max.
—
—
—
48
—
400
—
400
—
—
251
0
—
Variable Clock
See Guaranteed
Operating Range
Min.
62.5
2tCLCL – 40
1tCLCL – 40
Max.
—
—
—
Unit
ns
ns
ns
1tCLCL – 35
—
ns
6tCLCL – 100
—
ns
6tCLCL – 100
—
ns
—
5tCLCL – 165 ns
0
—
ns
—
96
—
2tCLCL – 70 ns
—
516
—
8tCLCL – 150 ns
—
585
—
9tCLCL – 165 ns
150
300
3tCLCL – 100 3tCLCL + 50
ns
203
—
4tCLCL – 130
—
ns
23
—
1tCLCL – 60
—
ns
433
—
7tCLCL – 150
—
ns
33
—
1tCLCL – 50
—
ns
—
0
—
0
ns
43
183
1tCLCL – 40 1tCLCL + 100 ns
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