2SA1406 查看數據表（PDF） - SANYO -> Panasonic

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2SA1406

(2SA1406/2SC3600) PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

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Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Output Capacitance

Reverse Transfer Capacitance

2SA1406/2SC3600

Symbol

Conditions

VCE(sat) IC=(–)30mA, IB=(–)3mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=30mA, IB=(–)3mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)100µA, IC=0

Cob

VCB=(–)30V, f=1MHz

Cre

VCB=(–)30V, f=1MHz

Ratings

Unit

min typ max

0.6 V

(–0.8) V

(–)1.0 V

(–)200

V

(–)200

V

(–)4

V

1.8

pF

(2.3)

pF

1.4

pF

(1.7)

pF

--50

2SA1406

--40

--30

--20

--10

IC -- VCE

--500µA

--450µA

--400µA

--350µA

--300µA

--250µA

--200µA

--150µA

--100µA

--50µA

IB=0

00

--4

--8

--12

--16

--20

Collector-to-Emitter Voltage, VCE – V ITR03479

IC -- VBE

120

2SA1406

VCE= --10V

100

80

60

40

20

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Base-to-Emitter Voltage, VBE – V ITR03481

3

hFE -- IC

2SA1406

2

VCE= --10V

100

7

5

3

2

10

7

5

5 7 --1.0

2 3 5 7 --10 2 3 5 7 --100 2

Collector Current, IC – mA

ITR03483

50

2SC3600

IC -- VCE

500µA

450µA

40

400µA

350µA

30

300µA

250µA

20

200µA

150µA

10

100µA

50µA

0

0

4

IB=0

8

12

16

20

Collector-to-Emitter Voltage, VCE – V ITR03480

IC -- VBE

120

2SC3600

VCE=10V

100

80

60

40

20

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Base-to-Emitter Voltage, VBE – V ITR03482

3

hFE -- IC

2SC3600

2

VCE=10V

100

7

5

3

2

10

7

5

5 7 1.0

2 3 5 7 10

2 3 5 7 100 2

Collector Current, IC – mA

ITR03484

No.1765-2/4

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