PBSS5330PAS 查看數據表（PDF） - NXP Semiconductors.
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PBSS5330PAS Datasheet PDF : 18 Pages
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NXP Semiconductors
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB
base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min
-
-
-
-
-
-
[1]
-
[2][3] -
[4]
-
[5][6] -
-
-55
-65
Max
-30
-30
-6
-3
-5
-500
600
1.2
1.5
2.5
175
175
175
Unit
V
V
V
A
A
mA
mW
W
W
W
°C
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
[6] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBSS5330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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