2N5623 查看數據表（PDF） - Inchange Semiconductor

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2N5623

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5621

2N5623/5625 IC=-50mA ;IB=0

2N5627

VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

2N5621/5625

2N5623/5627

IC=-5A ; VCE=-5V

2N5621/5625

fT

Transition frequency

IC=-1A ; VCE=-12V

2N5623/5627

MIN TYP. MAX UNIT

-60

-80

V

-100

-1.5

V

-1.5

V

-0.1 mA

-0.1 mA

70

200

30

90

40

MHz

30

2

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