2N5739 查看數據表（PDF） - SavantIC Semiconductor

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2N5739

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2N5739 2N5740

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N5739

-60

VCEO(SUS)

Collector-emitter

sustaining voltage

IC=-0.2A ;IB=0

V

2N5740

-100

VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-2.5A

VBEsat

Base-emitter saturation voltage

IC=-10A ;IB=-2.5A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

ICBO

Collector cut-off current

ICEX

Collector cut-off current

IEBO

Emitter cut-off current

VCB=Rated VCBO; IE=0

VCE= Rated VCEO; VBE(off)=1.5V

TC=150

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-5A ; VCE=-5V

20

hFE-2

DC current gain

IC=-10A ; VCE=-5V

4

fT

Transition frequency

IC=-0.5A ; VCE=-10V

10

-1.0

V

-3.0

V

-2.5

V

-1.5

V

-0.1 mA

-0.5

-5.0

mA

-1.0 mA

80

MHz

2

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