2N6056 查看數據表（PDF） - ON Semiconductor
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2N6056 Datasheet PDF : 8 Pages
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2N6056
ACTIVE–REGION SAFE OPERATING AREA
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
TJ = 200°C
0.5 ms
1.0 ms
5.0 ms dc
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.1 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TC = 25°C
VCE = 3.0 Vdc
IC = 3.0 Adc
2.0 5.0 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small–Signal Current Gain
300
200
100
70
50
30
0.1 0.2
TJ = 25°C
Cob
Cib
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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4
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