2N6520TA 查看數據表（PDF） - Fairchild Semiconductor

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2N6520TA

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Performance Characteristics

1000

100

VCE = -20V

10

1

-1

-10

-100

-1000

-10000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

1000

100

tD @ VBE(off)=-2.0V

tR

VCE(off) = -100V

IC/IB= 5

TJ=25oC

-10000

IC = 10 IB

-1000

-100

VCE(sat)

VBE(sat)

-10

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

-10000

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

tSTG

tF

VCE(off) = -100V

IC/IB= 5

IB1 = IB2

TJ=25oC

10

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 3. Turn-On Time

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-1

IC/IB = 10

Rθ VB for VBE

RθVC for VCE(sat)

-55oC to 125oC

-55oC to 25oC

-55oC to 125oC

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 5. Temperature Coefficients

© 2009 Fairchild Semiconductor Corporation

2N6520 Rev. B1

3

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 4. Turn-Off Time

100

f=1MHz

10

Cib

Cob

1

-0.1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 6. Capacitance

www.fairchildsemi.com

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