2N7002F 查看數據表（PDF） - Philips Electronics

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2N7002F

N-channel TrenchMOS FET

Philips Electronics 

Philips Semiconductors

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Rth(j-sp) thermal resistance from junction to solder point

Rth(j-a) thermal resistance from junction to ambient

Conditions

see Figure 4

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air

2N7002F

N-channel TrenchMOS FET

Min Typ Max Unit

-

-

150 K/W

[1] -

-

350 K/W

103

003aab358

Zth(j-sp)

(K/W)

102

δ =0.5

0.2

0.1

10 0.05

0.02

single pulse

1

10-5

10-4

10-3

10-2

10-1

1

10

tp (s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002F_3

Product data sheet

Rev. 03 — 28 April 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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