2SA1220 查看數據表（PDF） - Inchange Semiconductor

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2SA1220

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SA1220/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB=B -0.2A

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -3V; IC=0

hFE-1

DC Current Gain

IC= -5mA ; VCE= -5V

hFE-2

DC Current Gain

IC= -0.3A ; VCE= -5V

fT

Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V;ftest= 1.0MHz

-0.7

V

-1.3

V

-1.0 μA

-1.0 μA

35

60

320

175

MHz

26

pF

‹ hFE-2 Classifications

R

Q

P

60-120 100-200 160-320

isc Website：www.iscsemi.cn

2

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