2SA1265N 查看數據表（PDF） - Inchange Semiconductor
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2SA1265N Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A
VBE
Base-emitter voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=-140V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=5V
fT
Transition frequency
IC=-1A ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
hFE-1 Classifications
R
O
55-110
80-160
Product Specification
2SA1265N
MIN TYP. MAX UNIT
-140
V
-0.8 -2.0 V
-1.0 -1.5 V
-5 μA
-5 μA
55
160
35
30
MHz
480
pF
2
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