C4443 查看數據表（PDF） - SANYO -> Panasonic

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C4443

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Continued from preceding page.

Parameter

2SA1685/2SC4443

Symbol

Conditions

Output Capacitance

Cob

VCB=(–)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat) IC=(–)10mA, IB=(–)1mA

Base-to-Emitter Saturation Voltage

VBE(sat) IC=(–)10mA, IB=(–)1mA

Collector-to-Base Breakdown Voltage

V(BR)CBO

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

Emitter-to-Base Breakdown Votage

V(BR)EBO

Delay Time

td

Rise Time

tr

Storage Time

tstg

Fall Time

tf

* : 2SA1685/2SC4443 are classified by 10mA hFE as follos :

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

2SA1685 Rank

3

4

hFE

60 to 120 90 to 180

2SC4443

Rank

hFE

Marking 2SA1685 : YL

2SC4443 : GT

hFE rank 2SA1685 : 3, 4

2SC4443 : 3, 4, 5

3

60 to 120

4

5

90 to 180 135 to 270

Switching Time Test Circuit

INPUT

IB1

IB2

1KΩ

OUTPUT

PW=10µs

D.C.≤2.5%

Tr, Tf=1ns

VR

50Ω

RB

5KΩ

+

2KΩ

+

100µF

470µF

--5V

VCC=10V

5IB1=--5IB2=IC=50mA

For PNP, the polarity is reversed.

Ratings

Unit

min

typ

max

(2.9)

pF

2.6

pF

0.08 (–)0.2 V

(–0.07)

V

0.72 (–)1.0 V

(–0.75)

V

(–)40

V

(–)20

V

(–)5

V

(14)11

20 ns

(11)10

20 ns

(80)70 180 ns

(16)15

25 ns

--100

2SA1685

--80

IC -- VCE

--1.0mA

--60

--0.8mA

--0.6mA

--0.4mA

--40

--0.2mA

--20

0

IB=0

0

--0.4

--0.8

--1.2

--1.6

--2.0

Collector-to-Emitter Voltage, VCE – V ITR04099

IV

IC -- VCE

100

1.0mA

2SC4443

0.8mA

80

0.6mA

60

0.4mA

40

0.2mA

20

0

IB=0

0

0.4

0.8

1.2

1.6

2.0

Collector-to-Emitter Voltage, VCE – V ITR04100

IV

No.3200-2/5

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