2SA1909 查看數據表（PDF） - Inchange Semiconductor
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2SA1909 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1909
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-140
V
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.5
V
-10 μA
-10 μA
hFE
DC current gain
IC=-3A ; VCE=-4V
50
180
fT
Transition frequency
IC=-0.5A ; VCE=-12V
20
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
400
pF
Switching times
体 ton
Turn-on time
固I电NC半H导ANGE SEMICONDUCTOR ts
Storage time
tf
Fall time
hFE classifications
O
P
Y
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A;VCC=-60V
0.17
μs
1.86
μs
0.27
μs
50-100 70-140 90-180
2
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