2SA634 查看數據表（PDF） - Inchange Semiconductor

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2SA634

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A

VBEsat Base-emitter saturation voltage

IC=-3.0A ;IB=-0.3 A

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-30V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.1A ; VCE=-5V

‹ hFE-2 Classifications

N

M

L

K

40-60 50-100 80-160 120-250

Product Specification

2SA634

MIN TYP. MAX UNIT

-2.0

V

-2.0

V

-30

V

20

40

250

-1.0 μA

-1.0 μA

75

pF

55

MHz

2

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