2SA699 查看數據表（PDF） - Inchange Semiconductor

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2SA699

Silicon PNP Power Transist

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A

VBEsat Base-emitter saturation voltage

IC=-2A ;IB=B -0.2 A

V(BR)CBO

Collector-base

breakdown voltage

2SA699

2SA699A

IC=-1mA;IE=0

V(BR)CEO

Collector-emitter

breakdown voltage

2SA699

2SA699A

IC=-10mA; IB=0

ICBO

Collector cut-off current

VCB=-20V; IE=0

ICEO

Collector cut-off current

VCE=-12V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-5V;f=1MHz

fT

Transition frequency

IE=0.5A ; VCB=-5V

‹ hFE classifications

P

Q

R

50-100 80-160 100-220

Product Specification

2SA699 2SA699A

MIN TYP. MAX UNIT

-0.4 -1.0

V

-1.5

V

-40

V

-50

-32

V

-40

-1

μA

-100 μA

-100 μA

50

220

70

pF

150

MHz

2

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