2SB1012K 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SB1012K

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1012(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

ID*1

Rating

Unit

–120

V

–120

V

–7

V

–1.5

A

–3.0

A

20

W

150

°C

–55 to +150

°C

1.5

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

C to E diode forward voltage

Turn on time

Turn off time

Note: 1. Pulse test

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VD

t on

t off

—

—

—

—

2000 —

—

—

—

—

—

—

—

—

—

—

—

0.5

—

2.0

Max Unit

—

V

—

V

–100 µA

–10 µA

30000

–1.5 V

–2.0 V

–2.0 V

–2.5 V

3.0 V

—

µs

—

µs

Test conditions

IC = –10 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –120 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –3 V, IC = –1 A*1

IC = –1 A, IB = –1 mA*1

IC = –1.5 A, IB = –1.5 mA*1

IC = –1 A, IB = –1 mA*1

IC = –1.5 A, IB = –1.5 mA*1

ID = 1.5 A*1

IC = –1 A, IB1 = –IB2 = –1 mA

2

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