B1015-O 查看數據表（PDF） - Quanzhou Jinmei Electronic

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产品描述 (功能)

生产厂家

B1015-O

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBE

Base-emitter voltage

IC=-0.5A ;VCE=-5V

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-0.5A; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V

Switching times

ton

Trun-on time

ts

Storage time

tf

Fall time

RL=15Ω;VCC=-30V

IB1=-IB2=-0.2A

Duty cycle≤1%

‹ hFE-1 Classifications

O

Y

60-120

100-200

Product Specification

2SB1015

MIN TYP. MAX UNIT

-60

V

-1.7

V

-1.0

V

-100 μA

-100 μA

60

200

20

9

MHz

150

pF

0.4

μs

1.7

μs

0.5

μs

2

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