2SB1122-D 查看數據表（PDF） - SANYO -> Panasonic

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2SB1122-D

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SB1122/2SD1622

Symbol

Conditions

VCE(sat) IC=(–)500mA, IB=(–)50mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

IC=(–)500mA, IB=(–)50mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit.

tstg

See specified Test Circuit.

tf

See specified Test Circuit.

Ratings

Unit

min typ max

(–180) (–500) mV

120 300 mV

(–)0.9 (–)1.2 V

(–)60

V

(–)50

V

(–)5

V

40

ns

(40)

ns

350

ns

(300)

ns

30

ns

(30)

ns

No.2040–2/4

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