B1091 查看數據表（PDF） - Renesas Electronics

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B1091

Silicon PNP Triple Diffused

Renesas Electronics 

2SB1091

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –60 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse Test.

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

t on

t stg

tf

—

—

—

—

1000 —

—

—

—

—

—

—

—

—

—

1.0

—

2.5

—

0.5

Max Unit

—

V

—

V

–100 µA

–10 µA

20000

–1.5 V

–3.0 V

–2.0 V

–3.5 V

—

µs

—

µs

—

µs

Test conditions

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –60 V, IE = 0

VCE = –50 V, RBE = ∞

VCE = –3 V, IC = –4 A*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

IC = –4 A, IB1 = –IB2 = –8 mA

Maximum Collector Dissipation Curve

60

40

20

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

–20 iC (peak)

–10

–5 IC (max)

1 µs

100 µs

–2

–1.0

–0.5

–0.2

Ta = 25°C

–0.1 1 Shot pulse

–0.05

–0.02

–1 –2

–5 –10 –20 –50 –100

Collector to emitter Voltage VCE (V)

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