2SB1023 查看數據表（PDF） - Inchange Semiconductor
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2SB1023 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1023
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1413
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
-60
-40
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
IB
Base current
-0.5
A
PC
Collector power dissipation
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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