2SB1023 查看數據表（PDF） - Inchange Semiconductor
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2SB1023 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1023
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0
-40
V
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA
-1.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=-2A ;IB=-4mA
VCB=-60V; IE=0
-2.0
V
-20
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.5
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
2000
hFE-2
DC current gain
导体 Switching times
固I电NC半HANGE SEMICONDUCTOR ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-3A ; VCE=-2V
1000
IB1=-IB2=-6mA
VCC=-30V ,RL=10Ω
0.30
μs
0.60
μs
0.25
μs
2
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