B1096 查看數據表（PDF） - Inchange Semiconductor

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B1096

Silicon PNP Power Transistora

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50mA

VBEsat Base-emitter saturation voltage

IC=-500mA ;IB=-50mA

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.4A ; VCE=-10V

fT

Transition frequency

IC=-0.4A; VCE=-10V

‹ hFE Classifications

M

L

K

40-80

60-120 100-200

Product Specification

2SB1096

MIN TYP. MAX UNIT

-150

V

-5

V

-1.0

V

-1.5

V

-50 μA

-50 μA

40

200

5

MHz

2

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