2SB1034 查看數據表（PDF） - SavantIC Semiconductor
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2SB1034 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1034
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-1mA
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-8V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-2V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
Switching times
IC=-0.5A ; VCE=-2V
ton
Turn-on time
ts
Storage time
tf
Fall time
RL=30A
IB1=IB2=1mA
VCC=-30V
MIN TYP. MAX UNIT
-80
V
-1.5
V
-2.0
V
-10
µA
-4
mA
2000
30
pF
50
MHz
0.4
µs
2.0
µs
0.4
µs
2
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