2SB1151 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SB1151 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1691
·Low saturation voltage
·Large current
·High total power dissipation:PT=1.3W
·Large current capability and wide SOA
APPLICATIONS
·DC-DC converter
·Driver of solenoid or motor
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1151
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
-60
-60
-7
-5
-8
-1
1.3
20
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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