2SB1103 查看數據表（PDF） - Inchange Semiconductor
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2SB1103 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1103
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA, IC=0
-7
V
VCEsat-1 Collector-emitter saturation voltage IC=-4A ,IB=-8mA
-1.5
V
VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA
-3.0
V
VBEsat-1 Base-emitter saturation voltage
IC=-4A ,IB=-8mA
-2.0
V
VBEsat-2 Base-emitter saturation voltage
IC=-8A ,IB=-80mA
-3.5
V
ICBO
Collector cut-off current
VCB=-60V, IE=0
-100 μA
ICEO
Collector cut-off current
固I电NC半H导A体NGE SEMICONDUCTOR hFE
DC current gain
VD
Diode forward voltage
Switching times
ton
Turn-on time
VCE=-50V, RBE=∞
IC=-4A ; VCE=-3V
ID=8A
1000
-10 μA
3.0
V
0.5
μs
tstg
Storage time
IC=-4A ,IB1=-IB2=-8mA
3.0
μs
tf
Fall time
1.0
μs
2
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