2SB1149 查看數據表（PDF） - Inchange Semiconductor
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2SB1149 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1149
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA
-0.9 -1.2
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=-1.5A ;IB=-1.5mA
VCB=-100V; IE=0
-1.5 -2.0
V
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0 mA
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
2000
15000
hFE-2
DC current gain
IC=-3A ; VCE=-2V
1000
Switching times
ton
Turn-on time
导体 tstg
Storage time
固I电NC半HANGE SEMICONDUCTOR tf
Fall time
hFE-1 Classifications
M
L
IC=-1.5A ; IB1=-IB2=-1.5mA
VCC≈-40V;RL=27Ω
K
0.5
μs
2.0
μs
1.0
μs
2000-5000 3000-7000 5000-15000
2
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