2SB1220 查看數據表（PDF） - Panasonic Corporation

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2SB1220

Silicon PNP epitaxial planer type

Panasonic Corporation 

Transistor

2SB1220

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SD1821

q High collector to emitter voltage VCEO.

q Low noise voltage NV.

q S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–150

V

Collector to emitter voltage VCEO

–150

V

Emitter to base voltage

VEBO

–5

V

Peak collector current

ICP

–100

mA

Collector current

IC

–50

mA

Collector power dissipation PC

150

mW

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 ~ +150

˚C

Unit: mm

0.425

2.1±0.1

1.25±0.1

0.425

1

3

2

0.2±0.1

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S-Mini Type Package

Marking symbol : I

s Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

ICBO

VCEO

VEBO

hFE*

VCB = –100V, IE = 0

IC = –100µA, IB = 0

IE = –10µA, IC = 0

VCE = –5V, IC = –10mA

–150

–5

130

–1

µA

V

V

450

Collector to emitter saturation voltage VCE(sat)

Transition frequency

fT

IC = –30mA, IB = –3mA

VCB = –10V, IE = 10mA, f = 200MHz

–1

V

200

MHz

Collector output capacitance

Cob

VCB = –10V, IE = 0, f = 1MHz

4

pF

Noise voltage

NV

VCE = –10V, IC = –1mA, GV= 80dB,

150

mV

Rg = 100kΩ, Function = FLAT

*hFE Rank classification

Rank

hFE

Marking Symbol

R

130 ~ 220

IR

S

185 ~ 330

IS

T

260 ~ 450

IT

1

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