2SB1186F 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SB1186F

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-1A ;IB=-0.1A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.1A ; VCE=-5V

fT

Transition frequency

IC=-0.1A; VCE=-5V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=-10V

‹ hFE Classifications

E

F

100-200

160-320

Product Specification

2SB1186

MIN TYP. MAX UNIT

-120

V

-120

V

-5

V

-2.0

V

-1.5

V

-1.0 μA

-1.0 μA

100

320

50

MHz

30

pF

2

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