2SB1187 查看數據表（PDF） - Inchange Semiconductor

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2SB1187

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50μA , IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA , IC=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-60V ;IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.5A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V ,f=1MHz

Product Specification

2SB1187

MIN TYP. MAX UNIT

-60

V

-80

V

-5

V

-1.0

V

-1.5

V

-10 μA

-10 μA

60

320

12

MHz

100

pF

2

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