IRF820 查看數據表（PDF） - Intersil
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IRF820 Datasheet PDF : 7 Pages
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IRF820
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
600
400
200
0
1
CISS
COSS
CRSS
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4
1.6
TJ = 25oC
TJ = 150oC
0.8
0
0
0.8
1.6
2.4
3.2
4.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 2.5A
16
12
8
IRF820, IRF822
VDS = 400V
VDS = 250V
VDS = 100V
4
00
4
8
12
16
20
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-249
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