B1342 查看數據表（PDF） - Inchange Semiconductor
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B1342 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1342
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-7
UNIT
V
V
V
IC
Collector current
-4
A
ICM
Collector current-peak
-6
A
PC
Collector power dissipation
Tj
Junction temperature
Ta=25℃
TC=25℃
2
W
30
150
℃
Tstg
Storage temperature
-55~150
℃
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