2SB642-Q 查看數據表（PDF） - Panasonic Corporation

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2SB642-Q

Silicon PNP epitaxial planer type

Panasonic Corporation 

Transistor

2SB642

Silicon PNP epitaxial planer type

For low-power general amplification

s Features

q High foward current transfer ratio hFE.

q M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–60

V

Collector to emitter voltage VCEO

–50

V

Emitter to base voltage

VEBO

–7

V

Peak collector current

ICP

–200

mA

Collector current

IC

–100

mA

Collector power dissipation PC

400

mW

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 ~ +150

˚C

6.9±0.1

1.5

1.5 R0.9

R0.9

Unit: mm

2.5±0.1

1.0

0.85

0.55±0.1

3

2

1

0.45±0.05

2.5 2.5

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

s Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

ICBO

ICEO

VCBO

VCEO

VEBO

hFE*

VCE(sat)

fT

Cob

VCB = –20V, IE = 0

–1

nA

VCE = –20V, IB = 0

–1

µA

IC = –10µA, IE = 0

–60

V

IC = –2mA, IB = 0

–50

V

IE = –10µA, IC = 0

–7

V

VCE = –10V, IC = –2mA

160

460

IC = –100mA, IB = –10mA

–1

V

VCB = –10V, IE = 2mA, f = 200MHz

80

MHz

VCB = –10V, IE = 0, f = 1MHz

3.5

pF

*hFE Rank classification

Rank

Q

hFE

160 ~ 260

R

210 ~ 340

S

290 ~ 460

1

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