2SB613 查看數據表（PDF） - Inchange Semiconductor
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2SB613 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB613
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min)
·High Power Dissipation-
: PC= 150W(Max)@TC=25℃
·High Current Capability
·Complement to Type 2SD583
APPLICATIONS
·Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IBB
Base Current
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-5
A
150
W
200
℃
-65~200 ℃
isc Website：www.iscsemi.cn
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