2SB655 查看數據表（PDF） - Inchange Semiconductor

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2SB655

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SB655

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min)

·High Power Dissipation-

: PC= 100W(Max)@TC=25℃

·Complement to Type 2SD675

APPLICATIONS

·Designed for low frequency power amplifier applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

-20

A

100

W

150

℃

Tstg

Storage Temperature

-55~150 ℃

isc Website：www.iscsemi.cn

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