2SB697 查看數據表（PDF） - Inchange Semiconductor
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2SB697 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB697
2SB697K
IC=-50mA ;IB=0
V(BR)CBO
Collector-emitter
breakdown voltage
2SB697
2SB697K
IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
hFE-1 Classifications
C
D
E
40-80
60-120
100-200
F
160-320
Product Specification
2SB697 2SB697K
MIN TYP. MAX UNIT
-140
V
-160
-160
V
-180
-6
V
-1.0 -2.5
V
-1.5
V
-0.1 mA
-0.1 mA
40
320
20
15
MHz
2
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