2SB868 查看數據表（PDF） - SavantIC Semiconductor
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2SB868 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB868
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.15A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-1A ; IB1=-IB2=-0.1A
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.5
V
-10
µA
-50
µA
45
60
260
30
MHz
0.15
µs
0.8
µs
0.15
µs
hFE-2 Classifications
R
Q
P
60-120
90-180 130-260
2
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