2SB856 查看數據表（PDF） - Inchange Semiconductor

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2SB856

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB856

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= -5mA ; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

hFE-2

DC Current Gain

IC= -0.1A; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -4V

MIN TYP. MAX UNIT

-50

V

-50

V

-4

V

-1.2

V

-1.5

V

-100 μA

35

200

35

35

MHz

‹ hFE-1 Classifications

A

B

C

35-70 60-120 100-200

isc Website：www.iscsemi.cn

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