2SB941 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SB941 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB941 2SB941A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
voltage
2SB941
2SB941A
IC=-30mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-3A, IB=-0.375A
VBE
Base-emitter voltage
IC=-3A ; VCE=-4V
IEBO
Emitter cut-off current
VEB=-5V; IC=0
ICEO
Collector
cut-off current
2SB941 VCE=-30V; IB=0
2SB941A VCE=-60V; IB=0
ICES
Collector
cut-off current
2SB941 VCE=-60V; VBE=0
2SB941A VCE=-80V; VBE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=0.5A; VCE=-10V,f=10MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-1A
IB1=-0.1A ,IB2=0.1A
hFE-1 Classifications
Q
P
70-150
120-250
MIN TYP. MAX UNIT
-60
V
-80
-1.2
V
-1.8
V
-1
mA
-0.3 mA
-0.2 mA
70
250
10
30
MHz
0.5
μs
1.2
μs
0.3
μs
2
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