2SB947A 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SB947A

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB947 2SB947A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

voltage

2SB947

2SB947A

IC=-10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-0.23A

VBEsat Base-emitter saturation voltage

IC=-7A ;IB=-0.23A

ICBO

Collector

cut-off current

2SB947 VCB=-40V; IE=0

2SB947A VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-2A ; VCE=-2V

fT

Transition frequency

IC=-0.5A; VCE=-10V,f=10MHz

COB

Collector output capacitance

f=1MHz ; VCB=-10V

ton

Trun-on time

ts

Storage time

IC=-2A ;IB1=-IB2=-66mA

tf

Fall time

‹ hFE-2 Classifications

Q

P

90-180

130-260

MIN TYP. MAX UNIT

-20

V

-40

-0.6

V

-1.5

V

-50 μA

-50 μA

-50 μA

45

90

260

150

MHz

200

pF

0.1

μs

0.5

μs

0.1

μs

2

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