2SC3025 查看數據表（PDF） - Inchange Semiconductor
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2SC3025 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A
VBE(sat) Base-emitter saturation voltage
ICES
Collector cut-off current
IC=5A; IB=1.25A
VCE=1500V; RBE=∞
Switching times
ts
Storage time
tf
Fall time
IC=5A; IB1=1A;IB2=-2.5A
Product Specification
2SC3025
MIN TYP. MAX UNIT
800
V
6
V
2.0
V
1.5
V
0.5 mA
4.0
μs
0.5
μs
2
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