2SC3329 查看數據表（PDF） - Toshiba
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2SC3329 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3329
For Low Noise Audio Amplifier Applications and
Recommended for The First Stages of MC Head
Amplifiers
2SC3329
Unit: mm
· Very low noise in the region of low signal source impedance
equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
· Low pulse noise. Low 1/f noise
· Low base spreading resistance: rbb’ = 2.0 Ω (typ.)
· Complementary to 2SA1316
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
80
V
80
V
5
V
100
mA
20
mA
400
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Base spreading resistance
Transition frequency
Collector output capacitance
Noise figure
ICBO
IEBO
V (BR) CEO
VCB = 80 V, IE = 0
VEB = 5 V, IC = 0
IC = 1 mA, IB = 0
hFE
VCE = 6 V, IC = 2 mA
(Note)
VCE (sat)
VBE
rbb’
IC = 10 mA, IB = 1 mA
VCE = 6 V, IC = 2 mA
VCE = 6 V, IC = 1 mA, f = 100 MHz
fT
VCE = 6 V, IC = 1 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA
f = 10 Hz, RG = 10 kW
VCE = 6 V, IC = 0.1 mA
NF
f = 1 kHz, RG = 10 kW
VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 100 W
Note: hFE classification GR: 200~400, BL: 350~700
1
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
80
¾
¾
V
200 ¾ 700
¾
¾
0.1
V
¾
0.6
¾
V
¾
2.0
¾
W
¾
42
¾ MHz
¾
6.2
¾
pF
¾
2
6
¾
1
2
dB
¾
2.5
¾
2003-03-25
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