2SC3306 查看數據表（PDF） - Inchange Semiconductor
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2SC3306 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3306
DESCRIPTION
·With TO-3P(I) package
·Collector-emitter sustaining voltage-
VCEO(sus)=400V(Min)
·Fast switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
500
400
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current-DC
10
A
ICM
Collector current-peak
15
A
IB
Base current
5
A
PC
Collector power dissipation
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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