2SC3309 查看數據表（PDF） - Inchange Semiconductor
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2SC3309 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3309
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
400
V
V(BR)CBO Collector -base breakdown voltage IE=1mA; IE=0
500
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=1A; IB=0.2A
VCB=400V; IE=0
1.5
V
100 μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
8
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
tr
Rise time
1.0
IB1=-IB2=0.08A
ts
Storage time
VCC≈200V;RL=250Ω
2.5
PW=20μs
tf
Fall time
1.0
μs
μs
μs
2
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