C3566 查看數據表（PDF） - Inchange Semiconductor
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C3566 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3566
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3.0A ; IB= 0.3A, L=1mH
60
VCEX(SUS)-1 Collector-Emitter Sustaining Voltage
IC= 3.0A ; IB1=-IB2= 0.3A,
VBE(OFF)=5.0V, L=180μH,clamped
80
VCEX(SUS)-2 Collector-Emitter Sustaining Voltage
IC= 6.0A ; IB1= 0.6A; IB2= -0.3A,
VBE(OFF)= -5.0V, L= 180μH,clamped
60
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICER
ICEX
IEBO
hFE-1
hFE-2
www.iscsemi.cn Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
VCE= 60V; RBE= 51Ω, Ta=125℃
VCE= 60V; VBE(off)= -1.5V
VCE= 60V; VBE(off)= -1.5V, Ta=125℃
VEB= 5V; IC=0
IC= 0.3A; VCE= 5V
40
IC= 3.0A; VCE= 5V
40
Switching times
V
V
V
0.6
V
1.5
V
10
μA
1.0
mA
10
μA
1.0
mA
10
μA
200
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3.0A ,RL= 17Ω,
IB1= -IB2= 0.3A,VCC≈ 50V
0.5
μs
3.0
μs
0.5
μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
isc Website：www.iscsemi.cn
2
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