2SD1115 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SD1115 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1115
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 2A; L= 10mH, PW= 50μs;
f= 50Hz
300
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 20mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 20mA
2.0
V
www.iscsemi.cn ICEO
Collector Cutoff Current
hFE
DC Current Gain
Switching times
ton
Turn-on Time
VCE= 300V; RBE= ∞
IC= 2A; VCE= 2V
500
1.0
IC= 2A, IB1= -IB2= 20mA
100
μA
μs
toff
Turn-Off Time
22
μs
isc Website：www.iscsemi.cn
2
Share Link: 